s mhop microelectronics c orp. a product summary v dss i d r ds(on) (m ) max -20v -3.3a 100 @ vgs=-2.5v 70 @ vgs=-4.5v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. p-channel enhancement mode field effect transistor www.samhop.com.tw jun,02,2010 1 details are subject to change without notice. s ot 23-3l g s d s g d STS2305A ver 1.1 green product symbolv ds v gs i dm w a p d c 1.25 -55 to 150 i d units parameter -20 -3.3 -12.5 vv 10 t c =25 c gate-source voltage drain-source voltage thermal characteristics absolute maximum ratings ( t c =25 c unless otherwise noted ) drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg 100 thermal resistance, junction-to-ambient r ja a t c =25 c limit t c =70 c a -2.6 0.8 w t c =70 c c/w
STS2305A www.samhop.com.tw jun,02,2010 2 v gs = 10v , v ds =0v v gs =0v,i s = -1a -0.8 -1 -20 -1 100 -0.5 55 11 380 196 175 28 98 157 132 7 0.6 3.5 v ds =-10v,v gs =0v v dd =-10v i d =-1a v gs =-4.5v r gen = 6 ohm v gs =-4.5v , i d =-3.3a v ds =-5v , i d =-3.3a v ds =-16v , v gs =0v v gs =0v , i d =-250ua v gs =-2.5v , i d =-2.8a 80 -0.8 -1.5 70 100 symbol min typ max units bv dss v i gss na v gs(th) v g fs s v sd c iss pf c oss pf c rss pf q g ncnc q gs nc q gd t d(on) ns t r ns t d(off) ns t f ns gate-drain charge switching characteristics gate-source charge total gate charge rise time turn-off delay time v ds =-10v,i d =-3.3a,v gs =-4.5v fall time turn-on delay time m ohm input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage reverse transfer capacitance on characteristics m ohm c c v ds =-10v,i d =-3.3a, v gs =-4.5v drain-source diode characteristics -1.2 v notes _ _ _ b a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. i s maximum continuous drain-source diode forward current a f=1.0mhz v ds =v gs , i d =-250ua ver 1.1
www.samhop.com.tw jun,02,2010 3 t j ( c ) -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation tj, junction temperature( c ) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature 10 8 6 4 2 0 0 0.6 3.6 3.0 2.4 1.8 1.2 tj=125 c -55 c 25 c 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =-250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =-250ua 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s = - 1 . 5 v v g s = - 2 v v g s = - 4 . 5 v v g s = - 2 . 5 v 240 200 160 120 80 40 1 1 2 4 6 8 v g s =-2.5v v g s =-4.5v 1.5 1.4 1.3 1.2 1.1 1.0 0 0 100 75 25 50 125 150 v g s =-4.5v i d =-3.3 a v g s =-2.5v i d = -2.8a STS2305A ver 1.1 v g s = - 3 v 10
www.samhop.com.tw jun,02,2010 4 r ds(on) (m ) -v gs , gate-to-source voltage(v) figure 7. on-resistance vs. -is, source-drain current(a) -v sd , body diode forward voltage(v) figure 8. body diode forward voltage c, capacitance(pf) -v ds , drain-to-source voltage(v) figure 9. capacitance -v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics -i d , drain current(a) -v ds , drain-source voltage(v) figure 12. maximum safe operating area gate-source voltage variation with source current 10 1 0.1 0.1 1 10 30 50 r ds (o n) l i mit v g s =-4.5v s ingle p uls e t a =25 c crss coss ciss 600 500 400 300 200 100 0 4 6 8 10 12 0 2 20.010.0 1.0 0 0.4 0.8 1.2 1.6 2.0 5.0 25 c 125 c 75 c 180150 120 9060 30 0 0.5 3.0 3.5 4.0 4.5 0 2.5 2.0 1.5 1.0 i d =-3.3a 125 c 25 c 75 c 5 43 2 10 0 2 4 6 8 10 12 v ds = -10v i d =-3.3a STS2305A ver 1.1 100 10 1 60 1 6 10 100 vds=-10v,id=-1a vgs=-4.5v td(off ) tr tf td(on) 60 dc 1 00u s 10 s 100 ms 1ms 10 ms
0.01 0. 1 1 10 0.0000 1 0.000 1 0.001 0.01 0. 1 1 10 100 1000 single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t) 4. duty c ycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 www.samhop.com.tw jun,02,2010 5 normalized transient thermal resistance square wave pulse duration(sec) figure 13. normalized thermal transient impedance curve STS2305A ver 1.1
www.samhop.com.tw jun,02,2010 6 package outline dimensions sot23-3l STS2305A ver 1.1 min. max. min. max. a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 l l1 0.300 0.500 0.012 0.020 0 8 0 8 0.550 ref. 0.022 ref. symbol dimensions in inches dimensions in millimeters 0.950 typ. 0.037 typ.
www.samhop.com.tw jun,02,2010 7 sot23-3l tape and reel data sot23-3l carrier tape sot23-3l reel 3.15 2 0.10 2.77 2 0.10 1.22 2 0.10 1.00 +0.05 1.50 +0.10 8.00 +0.30-0.10 1.75 2 0.10 3.50 2 0.05 4.00 2 0.10 4.00 2 0.10 2.00 2 0.05 0.22 2 0.04 178 178 2 1 60 2 1 9.00 2 0.5 12.00 2 0.5 13.5 ! ! 2 0.5 2.00 2 0.5 10.0 18.00 5.00 8 @ v unit: @ r g s k h w1 w n m 10.5 reel size tape size unit: @ package sot23-3l a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t t r feed direction STS2305A ver 1.1
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